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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
LE88506VC
RFQ
Microsemi Corporation MOSFET N-CH 200V 109A SP1 SP1 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Obsolete SP1 N-Channel 200V 9880pF @ 25V 480W (Tc) 109A (Tc) 10V 19 mOhm @ 50A, 10V 4V @ 2.5mA - ±30V -
MM54C04W/883C
Per Unit
$0.3831
RFQ
ON Semiconductor MOSFET N-CH 60V 50A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 Automotive, AEC-Q101, PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-Pak N-Channel 60V 1430pF @ 30V 75W (Tj) 50A (Tc) 10V 19 mOhm @ 50A, 10V 4.2V @ 250µA 30nC @ 10V ±20V -
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