- Package / Case :
- Mounting Type :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Microsemi Corporation | MOSFET N-CH 1000V 23A T-MAX | TO-247-3 Variant | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | T-MAX™ [B2] | N-Channel | 1000V | 4350pF @ 25V | 565W (Tc) | 23A (Tc) | 10V | 450 mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 21A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 1000V | 4350pF @ 25V | 460W (Tc) | 21A (Tc) | 10V | 450 mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154nC @ 10V | ±30V | - |