- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | POWER MOSFET - SIC | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Bulk | SiCFET (Silicon Carbide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D3Pak | N-Channel | 1200V | 625W (Tc) | 80A (Tc) | 20V | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | ||||
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Microsemi Corporation | POWER MOSFET - SIC | SOT-227-4, miniBLOC | - | Bulk | SiCFET (Silicon Carbide) | Chassis Mount | -55°C ~ 175°C (TJ) | Obsolete | SOT-227 | N-Channel | 1200V | 273W (Tc) | 51A (Tc) | 20V | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | ||||
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Microsemi Corporation | POWER MOSFET - SIC | TO-247-3 | - | Bulk | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-247 | N-Channel | 1200V | 555W (Tc) | 80A (Tc) | 20V | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V |