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Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPB009N03LG
Per Unit
$0.2692
RFQ
Infineon Technologies MOSFET N-CH 80V 23A TDSON-8 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 N-Channel 80V 756pF @ 40V 2.5W (Ta), 32W (Tc) 7A (Ta), 23A (Tc) 6V, 10V 34 mOhm @ 12A, 10V 3.5V @ 12µA 9.1nC @ 10V ±20V -
BSZ42DN25NS3G
Per Unit
$0.2413
RFQ
Infineon Technologies MOSFET N-CH 80V 23A TSDSON-8 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8 N-Channel 80V 630pF @ 40V 2.1W (Ta), 32W (Tc) 6A (Ta), 23A (Tc) 6V, 10V 34 mOhm @ 12A, 10V 3.5V @ 12µA 9.1nC @ 10V ±20V -
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