- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies | MOSFET N-CH 650V TO-220-3 | TO-220-3 | Automotive, AEC-Q101, CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | N-Channel | 650V | 1110pF @ 100V | 104.2W (Tc) | 11.4A (Tc) | 10V | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | - | ||||
|
|
Infineon Technologies | MOSFET N-CH 650V 11.4A TO220 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | N-Channel | 650V | 1100pF @ 100V | 32W (Tc) | 11.4A (Tc) | 10V | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | - | ||||
|
|
Infineon Technologies | MOSFET N-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 650V | 1110pF @ 100V | 104.2W (Tc) | 11.4A (Tc) | 10V | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | - | |||||
|
|
Infineon Technologies | MOSFET N-CH 650V 11.4A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Last Time Buy | PG-TO262-3 | N-Channel | 650V | 1100pF @ 100V | 104.2W (Tc) | 11.4A (Tc) | 10V | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 650V 11.4A TO220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | N-Channel | 650V | 1100pF @ 100V | 104.2W (Tc) | 11.4A (Tc) | 10V | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 650V 11.4A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 650V | 1100pF @ 100V | 104.2W (Tc) | 11.4A (Tc) | 10V | 310 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | - |