- Package / Case :
- Series :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 40V 100A PQFN | 8-PowerTDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (5x6) | N-Channel | 40V | 6560pF @ 25V | 156W (Tc) | 100A (Tc) | 10V | 1.25 mOhm @ 100A, 10V | 3.9V @ 150µA | 190nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 195A | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 40V | 15140pF @ 25V | 375W (Tc) | 195A (Tc) | 4.5V, 10V | 1.25 mOhm @ 100A, 10V | 2.4V @ 250µA | 270nC @ 4.5V | ±20V | - |