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Package / Case :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
ESD201-B2-03LRH E6327
Per Unit
$4.7800
RFQ
Infineon Technologies MOSFET N-CH 250V 44A TO-247AC TO-247-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 175°C (TJ) Active TO-247AC N-Channel 250V 4560pF @ 25V 310W (Tc) 44A (Tc) 10V 46 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V ±30V -
ESD120-B1-W0201 E6327
Per Unit
$4.0700
RFQ
Infineon Technologies MOSFET N-CH 250V 46A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 175°C (TJ) Active TO-220AB N-Channel 250V 4560pF @ 25V 330W (Tc) 46A (Tc) 10V 46 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V ±30V -
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