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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET P-CH 20V 6.7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Discontinued at Digi-Key | 8-SO | P-Channel | 30V | 1100pF @ 25V | 2.5W (Ta) | 5.8A (Ta) | 4.5V, 10V | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | P-Channel | 30V | 1100pF @ 25V | 2.5W (Ta) | 5.8A (Ta) | 4.5V, 10V | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | ±20V | - |