- Manufacture :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Diodes Incorporated | MOSFET N-CH 450V 0.09A TO92-3 | TO-252-5, DPak (4 Leads + Tab), TO-252AD | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252-4L | N-Channel | 40V | 4305pF @ 25V | 3.9W (Ta), 180W (Tc) | 100A (Tc) | 10V | 3.2 mOhm @ 90A, 10V | 4V @ 250µA | 68.6nC @ 10V | ±20V | - | |||||
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Diodes Incorporated | MOSFET N-CH 60V 11.8A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252 | N-Channel | 40V | 4305pF @ 25V | 3.9W (Ta), 180W (Tc) | 100A (Tc) | 10V | 3.2 mOhm @ 90A, 10V | 4V @ 250µA | 68.6nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 90A TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3-313 | N-Channel | 40V | 5260pF @ 25V | 94W (Tc) | 90A (Tc) | 10V | 3.2 mOhm @ 90A, 10V | 4V @ 53µA | 66.8nC @ 10V | ±20V | - |