- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- FET Feature :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | N-Channel | 200V | 357pF @ 25V | 1.8W (Ta) | 660mA (Ta) | 4.5V, 10V | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | TO-261-4, TO-261AA | SIPMOS® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | N-Channel | 200V | 430pF @ 25V | 1.8W (Ta) | 660mA (Ta) | 0V, 10V | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | ±20V | Depletion Mode |