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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
FHT9014G-ME
Per Unit
$7.0100
RFQ
Vishay Siliconix MOSFET N-CH 600V 33A TO-220-3 TO-247-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247AC N-Channel 600V 4854pF @ 100V 379W (Tc) 47A (Tc) 10V 67 mOhm @ 24A, 10V 4V @ 250µA 225nC @ 10V ±30V -
IPB051NE8N G
Per Unit
$1.4199
RFQ
Infineon Technologies MOSFET N-CH 250V 24A 8TDSON 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TDSON-8 N-Channel 250V 2410pF @ 125V 150W (Tc) 24A (Tc) 10V 67 mOhm @ 24A, 10V 4V @ 90µA 30nC @ 10V ±20V -
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