- Mounting Type :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 100V | 10120pF @ 25V | 250W (Tc) | 120A (Tc) | 10V | 3.5 mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 75V 183A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | N-Channel | 75V | 10150pF @ 25V | 290W (Tc) | 183A (Tc) | 6V, 10V | 3.5 mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 75V 183A TO220 | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 75V | 10150pF @ 25V | 290W (Tc) | 183A (Tc) | 6V, 10V | 3.5 mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | P-Channel | 40V | 14790pF @ 25V | 136W (Tc) | 120A (Tc) | 10V | 3.5 mOhm @ 100A, 10V | 4V @ 340µA | 205nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 60V 100A TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3-11 | N-Channel | 60V | 10400pF @ 25V | 150W (Tc) | 100A (Tc) | 10V | 3.5 mOhm @ 100A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 80V 100A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 80V | 8110pF @ 40V | 214W (Tc) | 100A (Tc) | 6V, 10V | 3.5 mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | ±20V | - |