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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH TO220-3 | TO-220-3 | Automotive, AEC-Q101, OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | N-Channel | 100V | 6540pF @ 25V | 190W (Tc) | 120A (Tc) | 10V | 5.3 mOhm @ 100A, 10V | 3.5V @ 120µA | 91nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101, OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO262-3-1 | N-Channel | 100V | 6540pF @ 25V | 190W (Tc) | 120A (Tc) | 10V | 5.3 mOhm @ 100A, 10V | 3.5V @ 120µA | 91nC @ 10V | ±20V | - |