- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Diodes Incorporated | MOSFET N-CH 20V 4.2A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | Automotive, AEC-Q101 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | N-Channel | 20V | 452pF @ 10V | 1.4W | 4.9A (Ta) | 2.5V, 4.5V | 45 mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 4.8nC @ 10V | ±12V | |||||
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Diodes Incorporated | MOSFET P-CH 20V 3A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | N-Channel | 20V | 452pF @ 10V | 960mW (Ta) | 4.1A (Ta) | 2.5V, 4.5V | 45 mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 4.8nC @ 4.5V | ±12V |