- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Diodes Incorporated | MOSFET N-CH 100V 1A SOT-89 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23 | P-Channel | 60V | 219pF @ 30V | 625mW (Ta) | 900mA (Ta) | 4.5V, 10V | 400 mOhm @ 900mA, 10V | 3V @ 250µA | 2.9nC @ 4.5V | ±20V | |||||
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Diodes Incorporated | MOSFET P-CH 30V 1.1A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | P-Channel | 60V | 219pF @ 30V | 625mW (Ta) | 900mA (Ta) | 4.5V, 10V | 400 mOhm @ 900mA, 10V | 1V @ 250µA | 5.9nC @ 10V | ±20V |