- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET P-CH 30V 4.8A SOT-23 | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® Gen III | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | P-Channel | 20V | 3250pF @ 10V | 5W (Tc) | 15.4A (Tc) | 1.8V, 4.5V | 14 mOhm @ 9A, 4.5V | 1V @ 250µA | 99nC @ 8V | ±8V | |||||
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Diodes Incorporated | MOSFET N-CH 30V 7.44A 8DFN | 6-PowerUFDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | X1-DFN1616-6 (Type E) | N-Channel | 20V | 1788pF @ 10V | 610mW (Ta) | 9A (Ta) | 1.8V, 4.5V | 14 mOhm @ 9A, 4.5V | 900mV @ 250µA | 21.5nC @ 4.5V | ±10V |