Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
S10P40
Per Unit
$0.3321
RFQ
Diodes Incorporated MOSFET P-CH 100V 0.075A SOT23-3 8-SOIC (0.154", 3.90mm Width) - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SOP P-Channel 30V 1802pF @ 15V 2.5W (Ta) 12A (Ta) 4.5V, 10V 14 mOhm @ 8A, 10V 2V @ 250µA 30.7nC @ 10V ±25V
PT2313
Per Unit
$0.1739
RFQ
Diodes Incorporated MOSFET N-CH 20V 9A 6DFN 8-SOIC (0.154", 3.90mm Width) - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO N-Channel 30V 798pF @ 10V 1.46W (Ta) 8A (Ta) 4.5V, 10V 14 mOhm @ 8A, 10V 1.6V @ 250µA 8.7nC @ 5V ±20V
Page 1 / 1