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Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
TD2056AWHA
RFQ
Diodes Incorporated MOSFET P-CH 20V SOT23-3 9-UFBGA, WLBGA - MOSFET (Metal Oxide) Surface Mount -55°C ~ 155°C (TJ) Preliminary U-WLB1515-9 P-Channel 25V 850pF @ 10V 940mW (Ta) 3.9A (Ta) 1.8V, 4.5V 40 mOhm @ 2A, 4.5V 1.1V @ 250µA 7nC @ 4.5V -6V
PT8A300W
Per Unit
$0.2132
RFQ
Diodes Incorporated MOSFETN-CH 60VSOT223 9-UFBGA, WLBGA - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-WLB1515-9 P-Channel 25V 450pF @ 10V 1W (Ta) 4A (Ta) 1.8V, 4.5V 40 mOhm @ 2A, 4.5V 1.1V @ 250µA 6nC @ 4.5V -6V
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