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Supplier Device Package :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
S10P40PT
Per Unit
$0.3411
RFQ
Diodes Incorporated MOSFET P-CH 30V 12A 8-SOIC TO-236-3, SC-59, SOT-23-3 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23 P-Channel 100V 141pF @ 50V 625mW (Ta) 600mA (Ta) 6V, 10V 1 Ohm @ 600mA, 10V 4V @ 250µA 1.8nC @ 5V ±20V
QZX363C5V6-7
Per Unit
$0.1905
RFQ
Diodes Incorporated MOSFET N-CH 60V 1.2A SOT23-3 TO-236-3, SC-59, SOT-23-3 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23-3 P-Channel 100V 141pF @ 50V 625mW (Ta) 600mA (Ta) 6V, 10V 1 Ohm @ 600mA, 10V 4V @ 250µA 3.5nC @ 10V ±20V
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