Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Drain to Source Voltage (Vdss) Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs
SRF20-06
RFQ
GeneSiC Semiconductor TRANS SJT 1.2KV 10A TO-247-3 - Tube SiC (Silicon Carbide Junction Transistor) Through Hole 175°C (TJ) Obsolete TO-247AB 1200V 282W (Tc) 20A (Tc) 70 mOhm @ 20A
MTP4835L3-0-T3-G
RFQ
GeneSiC Semiconductor TRANS SJT 1.2KV 10A TO-247-3 - Tube SiC (Silicon Carbide Junction Transistor) Through Hole 175°C (TJ) Obsolete TO-247AB 1200V 282W (Tc) 20A (Tc) 70 mOhm @ 20A
LXM3-PW51-092
RFQ
GeneSiC Semiconductor TRANS SJT 1.2KV 10A TO-247-3 - Tube SiC (Silicon Carbide Junction Transistor) Through Hole 175°C (TJ) Obsolete TO-247AB 1200V 282W (Tc) 20A (Tc) 70 mOhm @ 20A
74HCT393N
RFQ
GeneSiC Semiconductor TRANS SJT 1.2KV 10A TO-247-3 - Tube SiC (Silicon Carbide Junction Transistor) Through Hole 175°C (TJ) Obsolete TO-247AB 1200V 282W (Tc) 20A (Tc) 70 mOhm @ 20A
SC9640P
RFQ
GeneSiC Semiconductor TRANS SJT 1.2KV 10A TO-247-3 - Tube SiC (Silicon Carbide Junction Transistor) Through Hole 175°C (TJ) Obsolete TO-247AB 1200V 282W (Tc) 20A (Tc) 70 mOhm @ 20A
BU2525AX
RFQ
GeneSiC Semiconductor TRANS SJT 1.2KV 10A TO-247-3 - Tube SiC (Silicon Carbide Junction Transistor) Through Hole 175°C (TJ) Obsolete TO-247AB 1200V 282W (Tc) 20A (Tc) 70 mOhm @ 20A
Page 1 / 1