- Manufacture :
- Package / Case :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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ROHM Semiconductor | MOSFET N-CH 20V 7.5A TSMT8 | SC-96 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Not For New Designs | TSMT3 | N-Channel | 30V | 165pF @ 10V | 1W (Ta) | 2.5A (Ta) | 4V, 10V | 70 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 4.1nC @ 5V | 20V | - | |||||
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ROHM Semiconductor | MOSFET N-CH 20V 7.5A TSMT8 | SC-96 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Not For New Designs | TSMT3 | N-Channel | 30V | 165pF @ 10V | 1W (Ta) | 2.5A (Ta) | 4V, 10V | 70 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 4.1nC @ 5V | 20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | TO-236-3, SC-59, SOT-23-3 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 (TO-236) | N-Channel | 30V | 225pF @ 15V | 750mW (Ta) | 2.6A (Ta) | 4.5V, 10V | 70 mOhm @ 2.5A, 10V | 3V @ 250µA | 4nC @ 5V | ±20V | - | |||||
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Vishay Siliconix | MOSFET P-CH 20V 2.2A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 (TO-236) | N-Channel | 30V | 225pF @ 15V | 750mW (Ta) | 2.6A (Ta) | 4.5V, 10V | 70 mOhm @ 2.5A, 10V | 3V @ 250µA | 4nC @ 5V | ±20V | - |