- Operating Temperature :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CH 80V 28A PPAK SO-8 | PowerPAK® SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | P-Channel | 80V | 5160pF @ 40V | 5.2W (Ta), 83.3W (Tc) | 28A (Tc) | 6V, 10V | 25 mOhm @ 10.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 30V 11A 8-SOIC | PowerPAK® SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | P-Channel | 80V | 5160pF @ 40V | 5.2W (Ta), 83.3W (Tc) | 28A (Tc) | 6V, 10V | 25 mOhm @ 10.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 30V 39A 8-SOIC | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252AA | P-Channel | 80V | 5350pF @ 25V | 136W (Tc) | 50A (Tc) | 4.5V, 10V | 25 mOhm @ 10.5A, 10V | 2.5V @ 250µA | 137nC @ 10V | ±20V | - |