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Supplier Device Package :
Power Dissipation (Max) :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
UMD6JN
Per Unit
$0.2584
RFQ
ROHM Semiconductor MOSFET P-CH 30V 2A TSMT5 TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Not For New Designs CPT3 N-Channel 60V 290pF @ 10V 15W (Tc) 5A (Ta) 4V, 10V 109 mOhm @ 5A, 10V 3V @ 1mA 8nC @ 10V ±20V -
UDZSTE-1736B 36V
Per Unit
$0.4406
RFQ
ROHM Semiconductor MOSFET N-CH 45V 7A SOP8 TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active TO-252 N-Channel 60V 290pF @ 10V 15W (Tc) 5A (Ta) 4V, 10V 109 mOhm @ 5A, 10V 3V @ 1mA 8nC @ 10V ±20V -
UDZS2.7B
Per Unit
$0.4173
RFQ
ROHM Semiconductor PCH -30V -5.5A MIDDLE POWER MOSF TO-252-3, DPak (2 Leads + Tab), SC-63 Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TO-252 N-Channel 60V 290pF @ 10V 15W (Ta) 5A (Ta) 4V, 10V 109 mOhm @ 5A, 10V 3V @ 1mA 8nC @ 10V ±20V -
RDN050N20
Per Unit
$0.2584
RFQ
ROHM Semiconductor MOSFET P-CH 30V 2A TSMT5 TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Not For New Designs CPT3 N-Channel 60V 290pF @ 10V 15W (Tc) 5A (Ta) 4V, 10V 109 mOhm @ 5A, 10V 3V @ 1mA 8nC @ 10V ±20V -
RB411VA-50 TR
Per Unit
$0.4406
RFQ
ROHM Semiconductor MOSFET N-CH 45V 7A SOP8 TO-252-3, DPak (2 Leads + Tab), SC-63 - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active TO-252 N-Channel 60V 290pF @ 10V 15W (Tc) 5A (Ta) 4V, 10V 109 mOhm @ 5A, 10V 3V @ 1mA 8nC @ 10V ±20V -
RB068L-30
Per Unit
$0.5346
RFQ
ROHM Semiconductor NCH 250V 4A POWER MOSFET TO-252-3, DPak (2 Leads + Tab), SC-63 Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TO-252 N-Channel 60V 290pF @ 10V 15W (Ta) 5A (Ta) 4V, 10V 109 mOhm @ 5A, 10V 3V @ 1mA 8nC @ 10V ±20V -
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