- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CH 12V 2.9A 4-MICROFOOT | PowerPAK® 1212-8 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® 1212-8 | N-Channel | 30V | 435pF @ 15V | 15.6W (Tc) | 12A (Tc) | 4.5V, 10V | 24 mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET P-CH 30V 45A DPAK | 8-SMD, Flat Lead | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 1206-8 ChipFET™ | N-Channel | 30V | 435pF @ 15V | 2.3W (Ta), 5.7W (Tc) | 6A (Tc) | 4.5V, 10V | 28 mOhm @ 6.8A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET P-CH 100V 10.8A 1212-8 | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | N-Channel | 30V | 435pF @ 15V | 2.4W (Ta), 5W (Tc) | 10.9A (Ta) | 4.5V, 10V | 24 mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET P-CH 30V 18A PPAK 1212-8 | PowerPAK® 1212-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® 1212-8 | N-Channel | 30V | 435pF @ 15V | 3.2W (Ta), 15.6W (Tc) | 12A (Tc) | 4.5V, 10V | 24 mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | - |