- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CH 200V 3.5A D2PAK | PowerPAK® SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 30V | 5370pF @ 15V | 5.2W (Ta), 69W (Tc) | 50A (Tc) | 4.5V, 10V | 3.1 mOhm @ 15A, 10V | 2.5V @ 250µA | 125nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 30V 30A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | N-Channel | 30V | 5370pF @ 15V | 3W (Ta), 6W (Tc) | 30A (Tc) | 4.5V, 10V | 3.3 mOhm @ 15A, 10V | 2.5V @ 250µA | 125nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 20V 13.5A 1212-8 | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | N-Channel | 30V | 5370pF @ 15V | 3W (Ta), 6W (Tc) | 30A (Tc) | 4.5V, 10V | 3.3 mOhm @ 15A, 10V | 2.5V @ 250µA | 125nC @ 10V | ±20V | - |