- Package / Case :
- Series :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Sanken | MOSFET N-CH 40V 29A TO-252 | 8-PowerTDFN | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | 8-DFN (5x6) | N-Channel | 30V | 1030pF @ 15V | 3.1W (Ta), 40W (Tc) | 12A (Ta) | 4.5V, 10V | 8.2 mOhm @ 25A, 10V | 2.5V @ 250µA | 16.3nC @ 10V | ±20V | - | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 600V 7A TO-220F | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 60V | 2007pF @ 30V | 3.1W (Ta) | 12A (Ta) | 4.5V, 10V | 11 mOhm @ 12A, 10V | 2.5V @ 250µA | 40nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET P-CH 20V 7.7A MICRO FOOT | PowerPAK® 1212-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -50°C ~ 150°C (TJ) | Active | PowerPAK® 1212-8 | P-Channel | 30V | 1870pF @ 15V | 3.5W (Ta), 27.8W (Tc) | 12A (Ta) | 4.5V, 10V | 15 mOhm @ 7A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±25V | - | |||||
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Vishay Siliconix | MOSFET N-CH 30V 12A PPAK SO-8 | PowerPAK® SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 30V | - | 1.8W (Ta) | 12A (Ta) | 4.5V, 10V | 7 mOhm @ 19A, 10V | 2.5V @ 250µA | 18nC @ 4.5V | ±20V | - | |||||
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Vishay Siliconix | MOSFET P-CH 60V 3.2A PPAK SO-8 | PowerPAK® SO-8 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® SO-8 | N-Channel | 30V | - | 1.8W (Ta) | 12A (Ta) | 4.5V, 10V | 7 mOhm @ 19A, 10V | 2.5V @ 250µA | 18nC @ 4.5V | ±20V | - | |||||
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Diodes Incorporated | MOSFET N-CH 30V 12A PWRDI3333-8 | 8-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | N-Channel | 30V | 4310pF @ 15V | 890mW (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | ±20V | Schottky Diode (Body) | |||||
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Diodes Incorporated | MOSFET N-CH 20V 11.7A SOT323 | 8-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | N-Channel | 30V | 4310pF @ 15V | 890mW (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | ±20V | Schottky Diode (Body) | |||||
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Diodes Incorporated | MOSFET N-CH 30V 7.5A PWRDI3333-8 | 8-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | N-Channel | 30V | 4310pF @ 15V | 890mW (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | ±20V | Schottky Diode (Body) | |||||
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Diodes Incorporated | MOSFET P-CH 60V 8SOIC | 8-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | N-Channel | 30V | 4310pF @ 15V | 890mW (Ta) | 12A (Ta) | 4.5V, 10V | 10 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 31.6nC @ 10V | ±20V | Schottky Diode (Body) | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 60V 12A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | N-Channel | 60V | 2007pF @ 30V | 3.1W (Ta) | 12A (Ta) | 4.5V, 10V | 11 mOhm @ 12A, 10V | 2.5V @ 250µA | 40nC @ 10V | ±20V | - |