- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 20V 1A POWERPAK0806 | SOT-23-6 Thin, TSOT-23-6 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-TSOP | P-Channel | 30V | 155pF @ 15V | 3W (Tc) | 3.4A (Tc) | 4.5V, 10V | 165 mOhm @ 2.5A, 10V | 2.5V @ 250µA | 6.8nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET N-CH 30V 600MA SC-70-3 | TO-236-3, SC-59, SOT-23-3 | Automotive, AEC-Q101, TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-236 (SOT-23) | P-Channel | 30V | 210pF @ 25V | 1.9W (Tc) | 2.5A (Tc) | 4.5V, 10V | 170 mOhm @ 1.8A, 10V | 2.5V @ 250µA | 6.8nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 100V 3.3A SOT223 | TO-261-4, TO-261AA | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223-4 | N-Channel | 100V | 315pF @ 50V | 2.2W (Ta) | 3.3A (Tc) | 4.5V, 10V | 100 mOhm @ 3.3A, 10V | 2.5V @ 250µA | 6.8nC @ 10V | ±20V | - |