- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 30V 20A 8SON | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8-FL | N-Channel | 30V | 1300pF @ 15V | 2.1W (Ta), 36W (Tc) | 20A (Ta), 40A (Tc) | 4.5V, 10V | 3.4 mOhm @ 20A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 19A 8TSDSON | 8-PowerTDFN | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8-FL | N-Channel | 40V | 1800pF @ 20V | 2.1W (Ta), 52W (Tc) | 19A (Ta), 40A (Tc) | 4.5V, 10V | 3.4 mOhm @ 20A, 10V | 2V @ 250µA | 25nC @ 10V | ±20V | - |