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Packaging :
Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SI6926EDQ-T1-E3
RFQ
Vishay Siliconix MOSFET N-CH 100V 40A TO220AB TO-220-3 TrenchFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB N-Channel 30V 1500pF @ 25V 93W (Tc) 70A (Tc) 4.5V, 10V 9 mOhm @ 30A, 10V 2V @ 250µA 19nC @ 5V ±20V -
FP6501
Per Unit
$0.2692
RFQ
Infineon Technologies MOSFET N-CH 30V 48A TDSON-8 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 N-Channel 30V 1900pF @ 15V 2.5W (Ta), 32W (Tc) 12A (Ta), 48A (Tc) 4.5V, 10V 9 mOhm @ 30A, 10V 2V @ 250µA 24nC @ 10V ±20V -
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