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3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IDH08SG60
Per Unit
$3.0409
RFQ
Infineon Technologies MOSFET N-CH 75V 120A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) N-Channel 75V 14400pF @ 37.5V 300W (Tc) 120A (Tc) 10V 2 mOhm @ 100A, 10V 3.8V @ 273µA 206nC @ 10V ±20V -
IPP023NE7N3G
RFQ
Infineon Technologies MOSFET N-CH 75V 120A TO220 TO-220-3 OptiMOS™ 3 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3 N-Channel 75V 14400pF @ 37.5V 300W (Tc) 120A (Tc) 10V 2.3 mOhm @ 100A, 10V 3.8V @ 273µA 206nC @ 10V ±20V -
IPB020NE7N3GATMA1
Per Unit
$3.0409
RFQ
Infineon Technologies MOSFET N-CH 75V 120A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) N-Channel 75V 14400pF @ 37.5V 300W (Tc) 120A (Tc) 10V 2 mOhm @ 100A, 10V 3.8V @ 273µA 206nC @ 10V ±20V -
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