- Series :
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- Operating Temperature :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 150V 21A TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO262-3 | N-Channel | 150V | 887pF @ 75V | 68W (Tc) | 21A (Tc) | 8V, 10V | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 40V 80A TO220-3-1 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | N-Channel | 40V | 3440pF @ 25V | 71W (Tc) | 80A (Tc) | 10V | 4.6 mOhm @ 80A, 10V | 4V @ 35µA | 43nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | 8-PowerVDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TSDSON-8 | N-Channel | 60V | 4000pF @ 30V | 2.1W (Ta), 69W (Tc) | 20A (Tc) | 10V | 7.6 mOhm @ 20A, 10V | 4V @ 35µA | 50nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 100V 10A PQFN | 8-PowerTDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (3x3) | N-Channel | 100V | 760pF @ 50V | 2.8W (Ta), 29W (Tc) | 3.2A (Ta), 20A (Tc) | 10V | 115 mOhm @ 6.3A, 10V | 4V @ 35µA | 26nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 120V 37A TSDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8 | N-Channel | 120V | 1900pF @ 60V | 66W (Tc) | 37A (Tc) | 10V | 24 mOhm @ 20A, 10V | 4V @ 35µA | 27nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 150V 21A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 150V | 890pF @ 75V | 57W (Tc) | 21A (Tc) | 8V, 10V | 52 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 150V 21A 8-TSDSON | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8 | N-Channel | 150V | 890pF @ 75V | 57W (Tc) | 21A (Tc) | 8V, 10V | 52 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 60V | 4000pF @ 30V | 2.5W (Ta), 69W (Tc) | 50A (Tc) | 10V | 7.6 mOhm @ 50A, 10V | 4V @ 35µA | 50nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 150V 21A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | N-Channel | 150V | 887pF @ 75V | 68W (Tc) | 21A (Tc) | 8V, 10V | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 150V 21A | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | N-Channel | 150V | 887pF @ 75V | 68W (Tc) | 21A (Tc) | 8V, 10V | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 150V 21A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 150V | 887pF @ 75V | 68W (Tc) | 21A (Tc) | 8V, 10V | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 150V 21A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 150V | 890pF @ 75V | 57W (Tc) | 21A (Tc) | 8V, 10V | 52 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 80A TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-3-2 | N-Channel | 40V | 3440pF @ 25V | 71W (Tc) | 80A (Tc) | 10V | 4.2 mOhm @ 80A, 10V | 4V @ 35µA | 43nC @ 10V | ±20V | - |