- Part Status :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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ON Semiconductor | MOSFET N-CH 600V 17A TO220 | - | Tube | GaNFET (Gallium Nitride) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220-3 | N-Channel | 600V | 760pF @ 480V | 96W (Tc) | 17A (Tc) | 8V | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | ||||
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ON Semiconductor | MOSFET N-CH 600V 9A TO220 | - | Tube | GaNFET (Gallium Nitride) | Through Hole | -55°C ~ 150°C (TJ) | Last Time Buy | TO-220-3 | N-Channel | 600V | 760pF @ 400V | 65W (Tc) | 9A (Tc) | 8V | 350 mOhm @ 5.5A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V |