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- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | MOSFET N-CH 1000V 65A J3 | J3 Module | - | Bulk | MOSFET (Metal Oxide) | Chassis Mount | -40°C ~ 150°C (TJ) | Discontinued at Digi-Key | Module | N-Channel | 1000V | 31600pF @ 25V | 1250W (Tc) | 65A (Tc) | 10V | 145 mOhm @ 32.5A, 10V | 4V @ 10mA | 2000nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 100V 570A SP6 | SP6 | - | Bulk | MOSFET (Metal Oxide) | Chassis Mount | -40°C ~ 150°C (TJ) | Active | SP6 | N-Channel | 100V | 40000pF @ 25V | 1660W (Tc) | 570A (Tc) | 10V | 2.5 mOhm @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 100V 495A SP6 | SP6 | - | Bulk | MOSFET (Metal Oxide) | Chassis Mount | -40°C ~ 150°C (TJ) | Active | SP6 | N-Channel | 100V | 40000pF @ 25V | 1250W (Tc) | 495A (Tc) | 10V | 2.5 mOhm @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 100V 495A SP6 | SP6 | - | Bulk | MOSFET (Metal Oxide) | Chassis Mount | -40°C ~ 150°C (TJ) | Active | SP6 | N-Channel | 100V | 40000pF @ 25V | 1250W (Tc) | 495A (Tc) | 10V | 2.5 mOhm @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | ±30V | ||||
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Littelfuse Inc. | MOSFET SIC 1200V 39A TO247-3 | TO-247-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 150°C | Active | TO-247-3 | N-Channel | 1200V | 1825pF @ 800V | 179W (Tc) | 39A (Tc) | 20V | 100 mOhm @ 20A, 20V | 4V @ 10mA | 95nC @ 20V | +22V, -6V |