- Manufacture :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 650V 31A TO-247 | TO-247-3 | Automotive, AEC-Q101, CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO247-3 | N-Channel | 600V | 2800pF @ 100V | 255W (Tc) | 31A (Tc) | 10V | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 600V 31A TO-220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | N-Channel | 600V | 2800pF @ 100V | 255W (Tc) | 31A (Tc) | 10V | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 31A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Not For New Designs | PG-TO262-3 | N-Channel | 600V | 2800pF @ 100V | 255W (Tc) | 31A (Tc) | 10V | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 31A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO262-3 | N-Channel | 600V | 2800pF @ 100V | 255W (Tc) | 31A (Tc) | 10V | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 600V 31A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | PG-TO263-3-2 | N-Channel | 600V | 2800pF @ 100V | 255W (Tc) | 31A (Tc) | 10V | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 650V 31A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO247-3 | N-Channel | 650V | 2800pF @ 100V | 255W (Tc) | 31A (Tc) | 10V | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 31A TO-220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | N-Channel | 650V | 2800pF @ 100V | 255W (Tc) | 31A (Tc) | 10V | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 38A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 650V | 2780pF @ 100V | 278W (Tc) | 38A (Tc) | 10V | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | ±20V | - | |||||
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Microsemi Corporation | MOSFET N-CH 600V 38A D3PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | Bulk | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D3Pak | N-Channel | 600V | 2826pF @ 25V | 278W (Tc) | 38A (Tc) | 10V | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112nC @ 10V | ±20V | - | ||||
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Microsemi Corporation | MOSFET N-CH 600V 38A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 600V | 2826pF @ 25V | 278W (Tc) | 38A (Tc) | 10V | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112nC @ 10V | ±20V | - |