- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET P-CH 30V 2.3A SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | P-Channel | 30V | 160pF @ 25V | 1.25W (Ta) | 2.3A (Ta) | 4.5V, 10V | 165 mOhm @ 2.3A, 10V | 2.4V @ 10µA | 2nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 30V 3.6A SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | P-Channel | 30V | 388pF @ 25V | 1.3W (Ta) | 3.6A (Ta) | 4.5V, 10V | 64 mOhm @ 3.6A, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | ±20V | - |