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4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PMB6725XUV1
Per Unit
$5.4508
RFQ
Infineon Technologies MOSFET N-CH 600V TO247-4 TO-247-4 CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-4 N-Channel 600V 3330pF @ 100V 278W (Tc) 37.9A (Tc) 10V 99 mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70nC @ 10V ±20V -
IPD25CN10N G
Per Unit
$6.7400
RFQ
Infineon Technologies MOSFET N-CH 600V TO247-3 TO-247-3 CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 N-Channel 600V 3330pF @ 100V 278W (Tc) 37.9A (Tc) 10V 99 mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70nC @ 10V ±20V -
IPD230N06NG
Per Unit
$6.3200
RFQ
Infineon Technologies MOSFET N-CH 600V TO220-3 TO-220-3 CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-3 N-Channel 600V 3330pF @ 100V 278W (Tc) 37.9A (Tc) 10V 99 mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70nC @ 10V ±20V -
FF1J4L
Per Unit
$6.3200
RFQ
Infineon Technologies MOSFET N-CH 600V TO220FP-3 TO-220-3 Full Pack CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-FP N-Channel 600V 3330pF @ 100V 34W (Tc) 37.9A (Tc) 10V 99 mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70nC @ 10V ±20V -
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