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5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PMB6250V1.2
Per Unit
$3.6007
RFQ
Infineon Technologies MOSFET N-CH 600V TO220-3 TO-220-3 Full Pack CoolMOS™ C7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220-FP N-Channel 600V 1819pF @ 400V 33W (Tc) 12A (Tc) 10V 99 mOhm @ 9.7A, 10V 4V @ 490µA 42nC @ 10V ±20V -
PMB2485V1.1
Per Unit
$3.0239
RFQ
Infineon Technologies MOSFET N-CH 600V 20A 4VSON 4-PowerTSFN CoolMOS™ C7 MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active PG-VSON-4 N-Channel 600V 1819pF @ 400V 122W (Tc) 20A (Tc) 10V 104 mOhm @ 9.7A, 10V 4V @ 490µA 42nC @ 10V ±20V -
IPI05CN10NG
Per Unit
$3.0363
RFQ
Infineon Technologies MOSFET N-CH 650V 22A TO263-3 TO-263-4, D²Pak (3 Leads + Tab), TO-263AA CoolMOS™ C7 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO263-3 N-Channel 650V 1819pF @ 400V 110W (Tc) 22A (Tc) 10V 99 mOhm @ 9.7A, 10V 4V @ 490µA 42nC @ 10V ±20V -
IPD350N06L
Per Unit
$7.0400
RFQ
Infineon Technologies MOSFET N-CH 600V 22A TO247-3 TO-247-3 CoolMOS™ C7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 N-Channel 600V 1819pF @ 400V 110W (Tc) 14A (Tc) 10V 99 mOhm @ 9.7A, 10V 4V @ 490µA 42nC @ 10V ±20V -
FF300R12KS4
Per Unit
$7.4800
RFQ
Infineon Technologies MOSFET N-CH 600V 22A TO247-4 TO-247-4 CoolMOS™ C7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-4 N-Channel 600V 1819pF @ 400V 110W (Tc) 22A (Tc) 10V 99 mOhm @ 9.7A, 10V 4V @ 490µA 42nC @ 10V ±20V -
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