- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 40V 84A 8PQFN | 8-PowerTDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | PQFN (5x6) | N-Channel | 40V | 2170pF @ 25V | 4.2W (Ta), 63W (Tc) | 84A (Tc) | 10V | 4.6 mOhm @ 50A, 10V | 3.9V @ 50µA | 66nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 100A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-Pak | N-Channel | 40V | 2200pF @ 25V | 79W (Tc) | 100A (Tc) | 10V | 4.25 mOhm @ 60A, 10V | 3.9V @ 50µA | 63nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 95A TO-220AB | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 40V | 2110pF @ 25V | 83W (Tc) | 95A (Tc) | 6V, 10V | 4.5 mOhm @ 57A, 10V | 3.9V @ 50µA | 68nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET®, StrongIRFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252, (D-Pak) | N-Channel | 40V | 2110pF @ 25V | 83W (Tc) | 56A (Tc) | 6V, 10V | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | ±20V | - |