- Series :
- Mounting Type :
- Operating Temperature :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 650V TO247-4 | TO-247-4 | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-4 | N-Channel | 650V | 2140pF @ 400V | 128W (Tc) | 24A (Tc) | 10V | 95 mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V TO220-3 | TO-220-3 Full Pack | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-FP | N-Channel | 650V | 2140pF @ 400V | 34W (Tc) | 12A (Tc) | 10V | 95 mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 4VSON | 4-PowerTSFN | CoolMOS™ C7 | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-VSON-4 | N-Channel | 650V | 2140pF @ 400V | 128W (Tc) | 21A (Tc) | 10V | 99 mOhm @ 5.9A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 600V 37A TO247-3 | TO-247-3 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | N-Channel | 600V | 2180pF @ 400V | 129W (Tc) | 37A (Tc) | 10V | 80 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V TO-220-3 | TO-220-3 | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | N-Channel | 650V | 2140pF @ 400V | 128W (Tc) | 24A (Tc) | 10V | 95 mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ C7 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO263-3 | N-Channel | 650V | 2140pF @ 400V | 128W (Tc) | 24A (Tc) | 10V | 95 mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ P7 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 650V | 2180pF @ 400V | 129W (Tc) | 37A (Tc) | 10V | 80 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET TO247-4 | TO-247-4 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-4 | N-Channel | 600V | 2180pF @ 400V | 129W (Tc) | 37A (Tc) | 10V | 80 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CHANNEL 600V 37A TO220 | TO-220-3 Full Pack | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | N-Channel | 600V | 2180pF @ 400V | 29W (Tc) | 37A (Tc) | 10V | 80 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 600V 37A TO220-3 | TO-220-3 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-3 | N-Channel | 600V | 2180pF @ 400V | 129W (Tc) | 37A (Tc) | 10V | 80 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 4VSON | 4-PowerTSFN | CoolMOS™ P7 | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-VSON-4 | N-Channel | 650V | 2180pF @ 400V | 154W (Tc) | 39A (Tc) | 10V | 85 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | - |