- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Infineon Technologies | MOSFET N-CH 100V 6PQFN | 6-VDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 6-PQFN (2x2) | N-Channel | 100V | 440pF @ 50V | 11.5W (Tc) | 11A (Tc) | 4.5V, 10V | 42 mOhm @ 6.7A, 10V | 2.3V @ 10µA | 5.6nC @ 4.5V | ±20V | |||||
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Infineon Technologies | MOSFET N-CH 60V 18.5A 6PQFN | 6-VDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 6-PQFN (2x2) | N-Channel | 60V | 660pF @ 25V | 11.5W (Tc) | 18.5A (Tc) | 4.5V, 10V | 17 mOhm @ 11A, 10V | 2.3V @ 10µA | 8nC @ 4.5V | ±20V |