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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPB022N04L
Per Unit
$0.6818
RFQ
Infineon Technologies MOSFET N-CH 120V 44A TDSON-8 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 N-Channel 120V 2300pF @ 60V 69W (Tc) 8.6A (Ta), 44A (Tc) 10V 19 mOhm @ 39A, 10V 4V @ 42µA 34nC @ 10V ±20V -
IPB017N10N5LF
Per Unit
$0.4818
RFQ
Infineon Technologies MOSFET N-CH 100V 45A TDSON-8 8-PowerTDFN OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 N-Channel 100V 2300pF @ 50V 78W (Tc) 8.5A (Ta), 45A (Tc) 10V 19.6 mOhm @ 45A, 10V 4V @ 42µA 34nC @ 10V ±20V -
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