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Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PMB6814
Per Unit
$9.1263
RFQ
Infineon Technologies MOSFET N-CH 600V 34.1A TO-247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO247-3 N-Channel 600V 5060pF @ 25V 313W (Tc) 34.1A (Tc) 10V 118 mOhm @ 21.6A, 10V 5V @ 1.9mA 212nC @ 10V ±20V -
PEF22834FV1.1
Per Unit
$2.1295
RFQ
Infineon Technologies MOSFET N-CH 600V 11A TO220-3 TO-220-3 Full Pack CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO220-3 N-Channel 600V 1200pF @ 25V 33W (Tc) 11A (Tc) 10V 440 mOhm @ 7A, 10V 5V @ 1.9mA 64nC @ 10V ±20V -
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