- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Alpha Omega Semiconductor Inc. | MOSFET N-CH 30V 21A 8DFN | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | N-Channel | 40V | 1950pF @ 20V | 1.7W (Ta) | 10A (Ta) | 4.5V, 10V | 10 mOhm @ 10A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | |||||
|
|
Diodes Incorporated | MOSFET PCH 60V 8SO | 8-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | N-Channel | 40V | 1810pF @ 20V | 930mW (Ta) | 11.5A (Ta) | 4.5V, 10V | 12 mOhm @ 14A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | |||||
,TO-226_straightlead.jpg)
|
|
Diodes Incorporated | MOSFET N-CH 200V 0.1A TO92-3 | 8-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | N-Channel | 40V | 1810pF @ 20V | 930mW (Ta) | 11.5A (Ta) | 4.5V, 10V | 12 mOhm @ 14A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | |||||
;;3.jpg)
|
|
Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | ||||
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(TSOP-6) | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | |||||
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | |||||
|
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | ||||
|
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | Micro6™(TSOP-6) | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro6™(TSOP-6) | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | |||||
|
|
Infineon Technologies | MOSFET N-CH 40V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 40V | 2600pF @ 20V | 2.5W (Ta), 69W (Tc) | 100A (Tc) | 4.5V, 10V | 2.2 mOhm @ 50A, 10V | 2V @ 250µA | 37nC @ 10V | ±20V | - | |||||
|
|
ON Semiconductor | PT8P 40V LL PQFN56 | 8-PowerTDFN | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 8-DFN (5.1x6.3) | P-Channel | 40V | 2320pF @ 20V | 75W (Tj) | 50A (Tc) | 4.5V, 10V | 13.5 mOhm @ 50A, 10V | 3V @ 250µA | 37nC @ 10V | ±16V | - | |||||
|
|
Alpha Omega Semiconductor Inc. | MOSFET N-CH 40V 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | N-Channel | 40V | 1950pF @ 20V | 1.7W (Ta) | 10A (Ta) | 4.5V, 10V | 10 mOhm @ 10A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | |||||
|
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | ||||
|
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(TSOP-6) | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | |||||
|
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | |||||
|
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | ||||
|
|
|
Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | Micro6™(TSOP-6) | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | ||||
|
|
|
ON Semiconductor | PT8P 40V LL PQFN56 | 8-PowerTDFN | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 8-DFN (5.1x6.3) | P-Channel | 40V | 2320pF @ 20V | 75W (Tj) | 50A (Tc) | 4.5V, 10V | 13.5 mOhm @ 50A, 10V | 3V @ 250µA | 37nC @ 10V | ±16V | - | |||||
|
|
|
Alpha Omega Semiconductor Inc. | MOSFET N-CH 40V 13.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | N-Channel | 40V | 1950pF @ 20V | 1.7W (Ta) | 10A (Ta) | 4.5V, 10V | 10 mOhm @ 10A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - |