- Series :
- Operating Temperature :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 560V 4.5A TO-220AB | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO220-3-1 | N-Channel | 560V | 470pF @ 25V | 50W (Tc) | 4.5A (Tc) | 10V | 950 mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 100V 10.3A TO-220 | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO220-3-1 | N-Channel | 100V | 444pF @ 25V | 50W (Tc) | 10.3A (Tc) | 4.5V, 10V | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | ±20V | - |