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4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PMB2240V1.6
Per Unit
$2.8060
RFQ
Infineon Technologies MOSFET N-CH 150V 83A TO262-3 TO-262-3 Long Leads, I²Pak, TO-262AA OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO262-3 N-Channel 150V 3230pF @ 75V 214W (Tc) 83A (Tc) 8V, 10V 11.1 mOhm @ 83A, 10V 4V @ 160µA 55nC @ 10V ±20V -
ESD5V0S2U
Per Unit
$0.9438
RFQ
Infineon Technologies MOSFET N-CH 150V 6.2A DIRECTFET DirectFET™ Isometric MZ HEXFET® MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active DIRECTFET™ MZ N-Channel 150V 2340pF @ 25V 2.8W (Ta), 89W (Tc) 6.2A (Ta), 35A (Tc) 10V 34.5 mOhm @ 7.6A, 10V 4.9V @ 150µA 55nC @ 10V ±20V -
BTS542E2
Per Unit
$2.3665
RFQ
Infineon Technologies MOSFET N-CH 150V 83A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) N-Channel 150V 3230pF @ 75V 214W (Tc) 83A (Tc) 8V, 10V 10.8 mOhm @ 83A, 10V 4V @ 160µA 55nC @ 10V ±20V -
IPB108N15N3GATMA1
Per Unit
$2.3665
RFQ
Infineon Technologies MOSFET N-CH 150V 83A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) N-Channel 150V 3230pF @ 75V 214W (Tc) 83A (Tc) 8V, 10V 10.8 mOhm @ 83A, 10V 4V @ 160µA 55nC @ 10V ±20V -
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