- Manufacture :
- Package / Case :
- Operating Temperature :
- Part Status :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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ROHM Semiconductor | MOSFET P-CH 30V 4.5A TSMT6 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Not For New Designs | CPT3 | N-Channel | 100V | 2100pF @ 25V | 850mW (Ta), 20W (Tc) | 20A (Tc) | 4V, 10V | 46 mOhm @ 20A, 10V | 2.5V @ 1mA | 55nC @ 10V | ±20V | |||||
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ROHM Semiconductor | MOSFET P-CH 30V 4.5A TSMT6 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Not For New Designs | CPT3 | N-Channel | 100V | 2100pF @ 25V | 850mW (Ta), 20W (Tc) | 20A (Tc) | 4V, 10V | 46 mOhm @ 20A, 10V | 2.5V @ 1mA | 55nC @ 10V | ±20V | |||||
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ON Semiconductor | MOSFET P-CHANNEL 60V 38A ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | ATPAK | P-Channel | 60V | 2400pF @ 20V | 60W (Tc) | 38A (Ta) | 4V, 10V | 29.5 mOhm @ 18A, 10V | 2.6V @ 1mA | 55nC @ 10V | ±20V | |||||
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ON Semiconductor | MOSFET P-CH 60V 35A ATPAK | ATPAK (2 leads+tab) | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | ATPAK | P-Channel | 60V | 2400pF @ 20V | 50W (Tc) | 35A (Ta) | 4V, 10V | 29.5 mOhm @ 18A, 10V | - | 55nC @ 10V | ±20V |