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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
OB2359LAP
RFQ
ON Semiconductor MOSFET N-CH 500V 20A TO-247 TO-247-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247 N-Channel 500V 3290pF @ 25V 277W (Tc) 20A (Tc) 10V 265 mOhm @ 10A, 10V 5V @ 250µA 55nC @ 10V ±30V -
MGSF1P02LT1G
Per Unit
$5.7600
RFQ
ON Semiconductor MOSFET N-CH 600V 22A TO247 TO-247-3 SuperFET® II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 N-Channel 600V 2860pF @ 380V 227W (Tc) 22A (Tc) 10V 170 mOhm @ 11A, 10V 3.5V @ 250µA 55nC @ 10V ±20V -
FQH18N50V2
RFQ
ON Semiconductor MOSFET N-CH 500V 20A TO-247 TO-247-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247 N-Channel 500V 3290pF @ 25V 277W (Tc) 20A (Tc) 10V 265 mOhm @ 10A, 10V 5V @ 250µA 55nC @ 10V ±30V -
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