- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Vgs (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies | MOSFET N-CH 100V 80A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | N-Channel | 100V | 3980pF @ 50V | 125W (Tc) | 80A (Tc) | 6V, 10V | 8.2 mOhm @ 73A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | - | |||||
|
|
|
Infineon Technologies | MOSFET P-CH 30V 50A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | P-Channel | 30V | 3770pF @ 25V | 58W (Tc) | 50A (Tc) | 4.5V, 10V | 10.5 mOhm @ 50A, 10V | 2V @ 85µA | 55nC @ 10V | +5V, -16V | - |