- Manufacture :
- Package / Case :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 55V 110A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TrenchFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | TO-263 (D2Pak) | N-Channel | 55V | 3300pF @ 25V | 3.7W (Ta), 158W (Tc) | 110A (Tc) | 4.5V, 10V | 6 mOhm @ 30A, 10V | 3V @ 250µA | 100nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | N-Channel | 60V | 4175pF @ 30V | 3.6W (Ta), 156W (Tc) | 21A (Ta), 100A (Tc) | 10V | 4.1 mOhm @ 50A, 10V | 4V @ 150µA | 100nC @ 10V | ±20V | - |