- Series :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix | MOSFET N-CH 600V 9.2A D2PAK | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 500V | 1144pF @ 100V | 208W (Tc) | 14A (Tc) | 10V | 400 mOhm @ 7A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | |||||
|
Vishay Siliconix | MOSFET N-CH 600V 15A TO220 FULLP | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 500V | 1144pF @ 100V | 208W (Tc) | 14A (Tc) | 10V | 400 mOhm @ 7A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | |||||
|
Microsemi Corporation | MOSFET N-CH 500V 27A TO-247 | TO-247-3 | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247 [B] | N-Channel | 500V | 2596pF @ 25V | 300W (Tc) | 27A (Tc) | 10V | 180 mOhm @ 13.5A, 10V | 5V @ 1mA | 58nC @ 10V | ±30V | |||||
|
Microsemi Corporation | MOSFET N-CH 1000V 7A TO-247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 1000V | 1800pF @ 25V | 290W (Tc) | 7A (Tc) | 10V | 2 Ohm @ 4A, 10V | 5V @ 500µA | 58nC @ 10V | ±30V | |||||
|
ON Semiconductor | SUPERFET3 650V TO247 PKG | TO-247-3 | - | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | N-Channel | 650V | 2560pF @ 400V | 240W (Tc) | 30A (Tc) | 10V | 110 mOhm @ 15A, 10V | 5V @ 3mA | 58nC @ 10V | ±30V | |||||
|
Alpha Omega Semiconductor Inc. | MOSFET N-CH 900V 9A TO247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | N-Channel | 900V | 2560pF @ 25V | 368W (Tc) | 9A (Tc) | 10V | 1.3 Ohm @ 4.5A, 10V | 4.5V @ 250µA | 58nC @ 10V | ±30V |